The single layer structure of graphene with only one carbon atom thickness has led to a large number of studies on its unique electronic, optical and mechanical properties. According to a report by the Physicist Network on April 24, researchers at the Massachusetts Institute of Technology found that a bismuth-tellurium compound has many unusual properties similar to graphene, and in some cases can be complemented by graphene. material. The researchers found that the ruthenium-iridium film material has a variety of different controllable properties, and the material will thicken and directionally grow depending on the temperature and pressure of the environment. The results of the study were published in the latest issue of Nano Express. The new material has a unique two-dimensional planar structure and a Dirac cone electronic band structure, the term is called Dirac cone two-dimensional. This unusual electronic property like graphene allows electrons to move in different ways beyond what is possible in most materials, and this will be used in the manufacture of next-generation electronic chips or thermoelectric generators and coolers. Very ideal property. In these materials, the researchers say that "traveling like a light beam" allows new chips to have faster computing power. In some cases, electrons flow faster than traditional silicon chips, possibly hundreds of times. Similarly, in a thermoelectric application, the temperature difference between the two sides of the device creates a faster electronic motion current, coupled with stronger thermal insulation properties, which promotes more efficient power generation, such as the temperature difference between the two sides of the satellite. It is possible to show the use in powering satellites. The researchers said that no new equipment has been used to make any equipment, and some details have to be resolved, but the principle is clear, and the necessary verification will be made within one year. After the creation of a real device, many mysteries will be unveiled. (
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