Abstract Recently, the Russian University of Nuclear Research (MEPhl) and scientists from all over the world have developed a new technology for graphene purification, which can make graphene more stable under the intense oxygen free radical environment. This research is critical to the development of nanoelectronics technology...
Recently, the Russian University of Nuclear Research (MEPhl) and scientists from all over the world have developed a new technology for graphene purification, which can make graphene more stable under the intense oxygen free radical environment. This research plays a key role in promoting the development of nanoelectronic technology. The results of the study were published in the journal Carbon.
Graphene is a crystalline carbon film with a thickness of only one atom. It has excellent electronic properties, high conductivity, high optical transparency and good mechanical tensile properties. It is widely used in the field of nanoelectronics.
The preparation process of nanoelectronic devices requires a layer of polymer coating on the graphene and then peeling off it. The coating residue remaining on the graphene causes a certain degree of "contamination" to the graphene, reducing the mobility of the charge carriers in the graphene. Common methods for removing these polymer residues are heat treatment, plasma degumming, and chemical solvents, but these methods can affect or even destroy the quality properties of graphene. For example, ozone has a high activity and is commonly used to remove residues from graphene surfaces; however, ozone causes defects in graphene materials, resulting in degradation of its properties. Scientists from MEPhl have used the high-temperature sublimation technology of silicon carbide to prepare graphene with better stability and ozonation resistance. The new graphene is in contact with ozone for 10 minutes to maintain the same quality performance, while the average graphene loses its characteristics in an ozone environment for only three or four minutes.
Scientists from Greece, France and Sweden participated in the study. The staff used computer modeling to reveal the high stability of silicon carbide-graphene materials in a vigorous oxygen free radical environment. The anomalous stability exhibited by this novel graphene is related to the low toughness of epitaxial graphene materials on silicon carbide substrates.
Konstantin Katin, associate professor of MEPhl's Department of Polymer Physics, said that graphene with ordinary roughness is more susceptible to the presence of some raised areas; these raised areas are highly reactive toward the formation of epoxy groups, which will Destroy the integrity of graphene.
This new MEPhl study will help to produce industrial grade high quality graphene with superior electronic properties. ( Compile: China Superhard Materials Network )
The preparation process of nanoelectronic devices requires a layer of polymer coating on the graphene and then peeling off it. The coating residue remaining on the graphene causes a certain degree of "contamination" to the graphene, reducing the mobility of the charge carriers in the graphene. Common methods for removing these polymer residues are heat treatment, plasma degumming, and chemical solvents, but these methods can affect or even destroy the quality properties of graphene. For example, ozone has a high activity and is commonly used to remove residues from graphene surfaces; however, ozone causes defects in graphene materials, resulting in degradation of its properties. Scientists from MEPhl have used the high-temperature sublimation technology of silicon carbide to prepare graphene with better stability and ozonation resistance. The new graphene is in contact with ozone for 10 minutes to maintain the same quality performance, while the average graphene loses its characteristics in an ozone environment for only three or four minutes.
Scientists from Greece, France and Sweden participated in the study. The staff used computer modeling to reveal the high stability of silicon carbide-graphene materials in a vigorous oxygen free radical environment. The anomalous stability exhibited by this novel graphene is related to the low toughness of epitaxial graphene materials on silicon carbide substrates.
Konstantin Katin, associate professor of MEPhl's Department of Polymer Physics, said that graphene with ordinary roughness is more susceptible to the presence of some raised areas; these raised areas are highly reactive toward the formation of epoxy groups, which will Destroy the integrity of graphene.
This new MEPhl study will help to produce industrial grade high quality graphene with superior electronic properties. ( Compile: China Superhard Materials Network )
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