Currently, silicon integrated circuits for computer processors are approaching the maximum feasible density of transistors on a single chip, at least in a two-dimensional array. Moore's Law seems difficult to maintain. A research team at the University of Michigan in the United States has taken a different approach, bringing the transistor array into three-dimensional space and stacking a second layer of transistors directly on the most advanced silicon chip. This research paved the way for the development of silicon integrated circuits that break Moore's Law.
Moore's Law believes that the number of transistors that can be accommodated on an integrated circuit will double every two years. At present, the transistor density of silicon integrated circuits is close to the limit. As the size of silicon transistors becomes smaller and smaller, their operating voltage is also declining, resulting in the most advanced processing chips may not be compatible with high-voltage interface components such as touch panels, display drivers, etc. Operate under voltage to avoid the effects of false touch signals or too low brightness settings. This requires additional chips to handle the signal conversion between the interface device and the processor.
To solve the above problems, researchers at the University of Michigan have improved the performance of silicon complementary metal oxide semiconductor integrated circuits by monolithic three-dimensional integration of additional device layers. They first covered the silicon chip with a solution containing zinc and tin to form a uniform coating on the surface, then baked it briefly to dry it, and made a layer of zinc tin oxide film about 75 nanometers thick after repeated repetition. Thin-film transistors made with this zinc-tin oxide film can withstand higher voltages than the silicon chip below.
In order to solve the voltage mismatch between the two device layers, the researchers used a top Schottky and bottom ohmic contact structure. The Schottky gated thin-film transistor and vertical thin-film diode added to the contacts have excellent switching performance . Tests have shown that the basic silicon chip can still work after integrating high-voltage thin-film transistors.
Researchers say that silicon integrated circuits operate at low voltages (about 1 volt), but they can provide high-voltage processing capabilities through monolithic integrated thin-film transistors, eliminating the need for additional chips. Their new method introduces the advantages of oxide electronics into a single silicon transistor, which helps the development of more compact and more functional chips.
Related papers were published in the latest issue of "Nature · Electronics". (Reporter Liu Haiying)
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