Researchers at the University of Lancaster in the United Kingdom recently announced that they have collaborated with their Spanish counterparts to develop a new type of data storage device that combines the advantages of both current memory and flash memory devices with ultra-low energy consumption.
The university issued a news bulletin saying that the new device is a general-purpose memory, which can serve as an active memory for reading and writing at any time, and can also store data stably for a long time. It helps to save energy, alleviate the "digital technology energy crisis", and can also improve the experience of using electronic devices. For example, a computer can be started in seconds.
The dynamic random access memory (DRAM) currently used as memory is fast to read and write, but it is volatile, that is, the content will disappear after a sudden power failure. Even if the power is constantly on, it must be refreshed every tens of milliseconds. The consumption is very high. The data in the flash memory can be stored for a long time, at the cost of writing and erasing requires a higher voltage, high energy consumption, slow speed, and easy damage. New memories with both non-volatility, low energy consumption and high speed are the current research hotspots.
Researchers published a paper in the new British "Science Report" magazine that the new device uses a floating gate structure similar to flash memory, but instead of using metal oxide semiconductors like flash memory, it consists of indium arsenide, aluminum antimonide and Three materials of gallium antimonide. At the bottom is 630 nm thick gallium antimonide, and above it are multiple interleaved thin layers of aluminum antimonide and indium arsenide, ranging in thickness from a few nanometers to tens of nanometers, showing a heterogeneous structure like a "thousand layer cake".
The experiment found that due to the quantum mechanical properties of these three semiconductor materials, the new device can operate at a low voltage while achieving non-volatile storage. Due to the low voltage and capacitance requirements, the device's energy consumption per unit area is 1% and 1/1000 of DRAM and flash memory respectively. In addition, it needs to be refreshed at least one million times longer than DRAM, and the data retention period is theoretically longer than the age of the universe.
With the development of information technology, more and more data needs to be processed by computers and other electronic devices, and the storage capacity has increased rapidly. However, the problem of memory energy consumption has severely restricted the operating efficiency and user experience. The researchers said that as a new type of storage device, the technology has great potential.
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